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| PD - 91684A PRELIMINARY IRG4PSC71KD Short Circuit Rated UltraFast IGBT C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins * High abort circuit rating IGBTs, optimized for motorcontrol * Minimum switching losses combined with low conduction losses * Tightest parameter distribution * IGBT co-packaged with ultrafast soft recovery antiparallel diode * Creepage distance increased to 5.35mm VCES = 600V G E VCE(on) typ. = 1.83V @VGE = 15V, IC = 60A n-ch an nel Benefits * Highest current rating copack IGBT * Maximum power density, twice the power handling of the TO-247, less space than TO-264 * HEXFREDTM diode optimized for operation with IGBT, to minimize EMI, noise and switching losses SUPER - 247 Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM tsc VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. 600 85 60 200 200 50 200 10 20 350 140 -55 to +150 300 (0.063 in. (1.6mm) from case) Units V A s V W C Thermal Resistance\ Mechanical Parameter RJC RJC RCS RJA Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Recommended Clip Force Weight Min. --- --- --- --- 20.0(2.0) --- Typ. --- --- 0.24 --- --- 6 (0.21) Max. 0.36 0.69 --- 38 --- --- Units C/W N (kgf) g (oz) www.irf.com 1 5/11/99 IRG4PSC71KD Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage 600 -- -- V Temperature Coeff. of Breakdown Voltage -- 0.5 -- V/C Collector-to-Emitter Saturation Voltage -- 1.83 2.3 -- 2.20 -- V -- 1.81 -- Gate Threshold Voltage 3.0 -- 6.0 Temperature Coeff. of Threshold Voltage -- -8.0 -- mV/C Forward Transconductance 31 46 -- S Zero Gate Voltage Collector Current -- -- 500 A -- -- 13 mA Diode Forward Voltage Drop -- 1.4 1.7 V -- 1.3 -- Gate-to-Emitter Leakage Current -- -- 100 nA Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 10mA IC = 60A VGE = 15V See Fig. 2, 5 IC = 100A IC = 60A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 1.5mA VCE = 50V, IC = 60A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C IC = 60A See Fig. 13 IC = 60A, TJ = 150C VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M /dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 340 510 IC = 60A 44 66 nC VCC = 400V See Fig.8 160 240 VGE = 15V 82 -- 107 -- TJ = 25C ns 282 423 IC = 60A, VCC = 480V 97 146 VGE = 15V, RG = 5.0 3.95 -- Energy losses include "tail" 2.33 -- mJ and diode reverse recovery 6.28 7.7 See Fig. 9,10,18 -- -- s VCC = 360V, TJ = 125C VGE = 15V, RG = 5.0 , VCPK < 500V 87 -- TJ = 150C, See Fig. 11,18 104 -- IC = 60A, VCC = 480V ns 374 -- VGE = 15V, RG = 5.0 143 -- Energy losses include "tail" 8.5 -- mJ and diode reverse recovery 13 -- nH Measured 5mm from package 6900 -- VGE = 0V 730 -- pF VCC = 30V See Fig. 7 190 -- = 1.0MHz 82 120 ns TJ = 25C See Fig. 140 210 TJ = 125C 14 IF = 60A 8.2 12 A TJ = 25C See Fig. 13 20 TJ = 125C 15 VR = 200V 364 546 nC TJ = 25C See Fig. 1084 1625 TJ = 125C 16 di/dt = 200A/s 328 -- A/s TJ = 25C See Fig. 266 -- TJ = 125C 17 2 www.irf.com IRG4PSC71KD 60 F o r b o th : LOAD CURRENT (A) 45 D u ty c y c le : 5 0 % TJ = 1 2 5 C T sink = 9 0 C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 58 W S q u a re w a v e : 30 6 0% of rate d volta ge I 15 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 Ic , Collector-to-Emitter Current (A) 100 I C , Collector-to-Emitter Current (A) 100 TJ = 1 5 0 C TJ = 150 C 10 TJ = 2 5 C 10 TJ = 25 C 1 0 1 2 VG E = 15 V 2 0 s P U L SE W ID TH A 3 4 1 5 6 7 8 V CC = 50V 5s PULSE WIDTH 9 10 11 VC E , C olle ctor-to-Em itter Vo ltag e (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PSC71KD 100 3.0 LIM ITED BY PA C KA G E Maximum DC Collector Current (A) VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH I C = 120 A 80 60 2.0 I C = 60 A 40 I C = 30 A 20 V G E = 15 V 0 25 50 75 100 125 A 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem p era ture (C ) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (ZthJC) D = 0 .50 0.1 0 .20 0 .1 0 0.05 0.0 2 0.01 P DM SIN G L E PU L SE (T HE R M A L R ES PO N SE ) t 1 t2 Notes: 1. Duty factor D = t 1 / t2 2. Peak TJ = PDM x Z thJC + TC 0.01 0.0001 A 100 0.001 0.01 0.1 1 10 t 1 , R e ctang ular Pulse D uratio n (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PSC71KD 10000 8000 VGE , Gate-to-Emitter Voltage (V) 100 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 60A 16 C, Capacitance (pF) C ies 6000 12 4000 8 2000 Coes C res 4 0 1 10 0 0 100 200 300 400 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 14.0 100 12.0 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C I C = 60A RG = 5.0 VGE = 15V VCC = 480V IC = 120 A 10.0 10 IC = 60 A 8.0 IC = 30 A 6.0 0 10 20 30 40 50 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance ( ) TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com () 5 IRG4PSC71KD 24 Total Switching Losses (mJ) RG TJ VCC 20 VGE 16 = 5.0 = 150 C = 480V = 15V 1000 VGE = 20V T J = 125 oC I C, Collector Current (A) 12 100 8 4 SAFE OPERATING AREA 0 30 60 90 120 10 1 10 100 1000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 1000 Fig. 12 - Turn-Off SOA Instantaneous forward current - IF (A) 100 10 T J = 1 5 0 C T J = 1 2 5 C TJ = 2 5 C 1 0.4 0.8 1.2 1.6 2.0 2.4 F o rw a rd V o lta g e D ro p - V F M (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PSC71KD 200 100 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C 160 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C 120 trr- (nC) Irr- ( A) 10 80 I F = 30 A I F = 6 0A I F = 1 20 A 40 I F = 30A I F = 6 0A I F = 1 20A 1 100 0 100 d i f /d t - (A / s) 1000 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt d i f /d t - (A / s ) 4000 10000 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C 3000 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C Qrr- (nC) I F = 3 0A I F = 60A I F = 120 A 2000 di (rec) M/dt- (A /s) 1000 I F = 120 A I F = 60A I F = 30A 1000 0 100 d i f /dt - (A / s) 1000 100 100 1000 d i f /d t - (A / s) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4PSC71KD Same ty pe device as D .U.T. 90% Vge +Vge V ce 80% of Vce 430F D .U .T. Ic 10% Vce Ic 5 % Ic td (o ff) tf 9 0 % Ic Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf E o ff = t1 + 5 S V c e Ic Vceic d tdt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = trr id ddt Ic t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 E o n = V ce ieIc t dt Vce d t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 E re c = t4 V d idIc t dt Vd d t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4PSC71KD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000 F 100 V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4PSC71KD Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG= 5.0 (figure 19) Pulse width 80s; duty factor 0.1% Pulse width 5.0s, single shot Current limited by the package, (Die current = 100A) Case Outline and Dimensions -- Super-247 Dimensions are shown in millimeters WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 5/99 10 www.irf.com |
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